Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
Identifieur interne : 016272 ( Main/Repository ); précédent : 016271; suivant : 016273Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
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Abstract
We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the [310] and [130] azimuths, which indicate that the quantum dot shape is pyramidal with bounding facets corresponding to a family of four {136} planes. The determined structure, which possesses C2v symmetry, is quite different both from square-base pyramidal geometries which have been assumed in recent electronic structure calculations, and from previously proposed structures which have been based upon incomplete reflection high energy electron diffraction data. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction</title><author><name sortKey="Lee, Hao" uniqKey="Lee H">Hao Lee</name><affiliation><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute</s1><sZ>1 aut.</sZ></inist:fA14></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Lowe Webb, Roger" uniqKey="Lowe Webb R">Roger Lowe Webb</name></author><author><name sortKey="Yang, Weidong" uniqKey="Yang W">Weidong Yang</name></author><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name></author></titleStmt><publicationStmt><idno type="inist">98-0182789</idno><date when="1998-02-16">1998-02-16</date><idno type="stanalyst">PASCAL 98-0182789 AIP</idno><idno type="RBID">Pascal:98-0182789</idno><idno type="wicri:Area/Main/Corpus">017590</idno><idno type="wicri:Area/Main/Repository">016272</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>RHEED</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6835C</term><term>7361E</term><term>6114H</term><term>Etude expérimentale</term><term>RHEED</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Structure interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the [310] and [130] azimuths, which indicate that the quantum dot shape is pyramidal with bounding facets corresponding to a family of four {136} planes. The determined structure, which possesses C<sub>2v</sub> symmetry, is quite different both from square-base pyramidal geometries which have been assumed in recent electronic structure calculations, and from previously proposed structures which have been based upon incomplete reflection high energy electron diffraction data. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>72</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction</s1></fA08><fA11 i1="01" i2="1"><s1>LEE (Hao)</s1></fA11><fA11 i1="02" i2="1"><s1>LOWE WEBB (Roger)</s1></fA11><fA11 i1="03" i2="1"><s1>YANG (Weidong)</s1></fA11><fA11 i1="04" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Materials Science Institute</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></fA14><fA20><s1>812-814</s1></fA20><fA21><s1>1998-02-16</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0182789</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the [310] and [130] azimuths, which indicate that the quantum dot shape is pyramidal with bounding facets corresponding to a family of four {136} planes. 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